| Original Articles |
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Nonlinear Electrical Characteristics of Antimony and Copper Doped Tin Oxide Based Varistor Ceramics |
| WANG Chun-Ming;WANG Jin-Feng;SU Wen-Bin |
| School of Physics and Microelectronics, Shandong University, Jinan 250100 |
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| Cite this article: |
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WANG Chun-Ming, WANG Jin-Feng, SU Wen-Bin 2006 Chin. Phys. Lett. 23 728-731 |
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Abstract The novel CuO-doped dense tin oxide varistor ceramics are investigated. The densification of tin oxide varistor ceramics could be greatly improved by doping copper oxide additives. The introduction of antimony additives into a SnO2.CuO ceramic system would make it possess excellent nonlinearity. The sample doped with 0.05mol% Sb2O3 possesses the highest nonlinearity coefficient (α=17.9) and the lowest leakage current density (JL=52μA cm-2) among all the samples. A modified defect barrier model is introduced to explain the formation of the grain-boundary barrier. The nonlinear behaviour of (Cu, Sb)-doped SnO2 varistor system could be explained by the barrier model.
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| Keywords:
84.32.Ff
73.30.+y
77.22.Ch
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Published: 01 March 2006
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| PACS: |
84.32.Ff
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(Conductors, resistors (including thermistors, varistors, and photoresistors))
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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77.22.Ch
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(Permittivity (dielectric function))
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