| Original Articles |
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Growth and Magnetic Properties of Zincblende CrSb Epilayers on Relaxed and Strained (In, Ga)As Buffers |
| DENG Jia-Jun1;ZHAO Jian-Hua1;BI Jing-Feng1;ZHENG Yu-Hong1;JIA Quan-Jie2;NIU Zhi-Chuan1;WU Xiao-Guang1;ZHENG Hou-Zhi1 |
| 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, PO Box 918, Beijing 100039 |
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| Cite this article: |
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DENG Jia-Jun, ZHAO Jian-Hua, BI Jing-Feng et al 2006 Chin. Phys. Lett. 23 493-496 |
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Abstract Zincblende CrSb (zb-CrSb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (In,Ga)As buffer layers epitaxially prepared on (001) GaAs substrates by molecular-beam epitaxy. The structural characterizations of CrSb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction (GID). The results of GID experiments indicate that no sign of second phase exists in all the zb-CrSb layers. Superconducting quantum interference device measurements demonstrate that the thickness of zb-CrSb layers grown on both relaxed and strained (In,Ga)As buffer layers can be increased to ～12 monolayers (～3.6nm), compared to ～3 monolayers (～1nm) on GaAs directly.
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| Keywords:
81.05.Zx
81.05.Ea
75.70.Ak
81.15.Hi
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Published: 01 February 2006
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| PACS: |
81.05.Zx
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(New materials: theory, design, and fabrication)
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81.05.Ea
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(III-V semiconductors)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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