Effect of Small-Angle Scattering on the Integer Quantum Hall Plateau

Chin. Phys. Lett.

2006, Vol. 23

Issue (2): 436-438 DOI:

Original Articles

Effect of Small-Angle Scattering on the Integer Quantum Hall Plateau

SHU Qiang¹;LIN Yao-Wang^1,2;XING Xiao-Dong¹;YAO Jiang-Hong¹;PI Biao¹;SHU Yong-Chun¹;WANG Zhan-Guo^1,2;XU Jing-Jun¹

¹The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457 ²Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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SHU Qiang, LIN Yao-Wang, XING Xiao-Dong et al 2006 Chin. Phys. Lett. 23 436-438

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Abstract A GaAs/AlGaAs two-dimensional electron gas (2DEG) structure with the high mobility of mu_2K=1.78×10⁶cm¹/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64ps to 0.52ps after illuminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3ps to 67.8ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.

Keywords: 71.20.Nr 72.2.Jv

Published: 01 February 2006

PACS:	71.20.Nr	(Semiconductor compounds)
	72.2.Jv

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I2/0436

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	SHU Qiang
	LIN Yao-Wang
	XING Xiao-Dong
	YAO Jiang-Hong
	PI Biao
	SHU Yong-Chun
	WANG Zhan-Guo
	XU Jing-Jun

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