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Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films |
| GU Hao-Shuang;ZHANG Kai;HU Guang;LI Wei-Yong |
| State Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062 |
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| Cite this article: |
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GU Hao-Shuang, ZHANG Kai, HU Guang et al 2006 Chin. Phys. Lett. 23 3111-3114 |
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Abstract Thin film bulk acoustic resonators are fabricated by using silicon bulk micromachining technology, which are constructed mainly from aluminium nitride (AlN) piezoelectric films. The results of x-ray diffraction, scanning electron microscopy and atomic force microscopy show that the AlN films exhibit highly c-axis orientation with good surface morphology. The resonators with the AlN films possessed a reflection coefficient -10.6dB at the resonant frequency 2.537GHz, an effective electromechanical coupling coefficient 3.75%, series quality 101.8, and parallel quality 79.7.
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| Keywords:
85.50.-n
84.40.-x
77.84.-s
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Published: 01 November 2006
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| PACS: |
85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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