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Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films |
| XUE Shou-Bin;ZHUANG Hui-Zhao;XUE Cheng-Shan;HU Li-Jun |
| Institute of Semiconductors, Shandong Normal University, Jinan 250014 |
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| Cite this article: |
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XUE Shou-Bin, ZHUANG Hui-Zhao, XUE Cheng-Shan et al 2006 Chin. Phys. Lett. 23 3055-3057 |
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Abstract Large quantities of GaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga2O3/ZnO at 950°C in a quartz tube. The structure, morphology and optical properties of the as-prepared GaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the GaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80nm to 300nm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.
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| Keywords:
68.65.-k
78.30.Fs
81.15.Cd
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Published: 01 November 2006
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| PACS: |
68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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78.30.Fs
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(III-V and II-VI semiconductors)
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81.15.Cd
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(Deposition by sputtering)
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