Chin. Phys. Lett.  2006, Vol. 23 Issue (11): 3055-3057    DOI:
Original Articles |
Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films
XUE Shou-Bin;ZHUANG Hui-Zhao;XUE Cheng-Shan;HU Li-Jun
Institute of Semiconductors, Shandong Normal University, Jinan 250014
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XUE Shou-Bin, ZHUANG Hui-Zhao, XUE Cheng-Shan et al  2006 Chin. Phys. Lett. 23 3055-3057
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Abstract Large quantities of GaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga2O3/ZnO at 950°C in a quartz tube. The structure, morphology and optical properties of the as-prepared GaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the GaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80nm to 300nm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.
Keywords: 68.65.-k      78.30.Fs      81.15.Cd     
Published: 01 November 2006
PACS:  68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)  
  78.30.Fs (III-V and II-VI semiconductors)  
  81.15.Cd (Deposition by sputtering)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I11/03055
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XUE Shou-Bin
ZHUANG Hui-Zhao
XUE Cheng-Shan
HU Li-Jun
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