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Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique |
AI Yu-Jie1;XUE Cheng-Shan1;SUN Li-Li1;SUN Chuan-Wei2;ZHUANG Hui-Zhao1;WANG Fu-Xue;CHEN Jin-Hua1;LI Hong1 |
1Institute of Semiconductors, Shandong Normal University, Jinan 250014
2School of Information Science and Engineering, Jinan University, Jinan 250022 |
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Cite this article: |
AI Yu-Jie, XUE Cheng-Shan, SUN Li-Li et al 2006 Chin. Phys. Lett. 23 3052-3054 |
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Abstract GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2O3/Mg films under flowing ammonia atmosphere at the temperature of 1000°C for 15min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200nm to 600nm.
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Keywords:
68.37.Hk
68.55.Jk
78.30.Fs
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Published: 01 November 2006
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