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Nonlinear Optical Response of nc-Si-SiO2 Films Studied with Femtosecond Four-Wave Mixing Technique |
GUO Heng-Qun1;WANG Qi-Ming2 |
1College of Information Science and Technology, Huaqiao University, Quanzhou 362021
2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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Cite this article: |
GUO Heng-Qun, WANG Qi-Ming 2006 Chin. Phys. Lett. 23 2989-2992 |
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Abstract Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility X(3) is observed to be 1.3×10-10esu at 800nm. The relaxation time of the film is fast as short as 50fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.
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Keywords:
42.65.-k
78.67.Bf
78.47.+p
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Published: 01 November 2006
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