Chin. Phys. Lett.  2006, Vol. 23 Issue (11): 2989-2992    DOI:
Original Articles |
Nonlinear Optical Response of nc-Si-SiO2 Films Studied with Femtosecond Four-Wave Mixing Technique
GUO Heng-Qun1;WANG Qi-Ming2
1College of Information Science and Technology, Huaqiao University, Quanzhou 362021 2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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GUO Heng-Qun, WANG Qi-Ming 2006 Chin. Phys. Lett. 23 2989-2992
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Abstract Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO2 films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility X(3) is observed to be 1.3×10-10esu at 800nm. The relaxation time of the film is fast as short as 50fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.
Keywords: 42.65.-k      78.67.Bf      78.47.+p     
Published: 01 November 2006
PACS:  42.65.-k (Nonlinear optics)  
  78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)  
  78.47.+p  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I11/02989
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