| Original Articles |
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In-Situ Conductivity Measurement of BaF2 under High Pressure and High Temperature |
| HAO Ai-Min1,2;GAO Chun-Xiao1;LI Ming1;HE Chun-Yuan1;HUANG Xiao-Wei1;ZHANG Dong-Mei1;YU Cui-Ling1;ZOU Guang-Tian1;LI Yan-Chun3;LI Xiao-Dong3;LIU Jing3 |
| 1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012
2Department of Mathematics and Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004
3Beijing Synchrotron Radiation Facility, Chinese Academy of Sciences, Beijing 100039 |
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| Cite this article: |
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HAO Ai-Min, GAO Chun-Xiao, LI Ming et al 2006 Chin. Phys. Lett. 23 2917-2919 |
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Abstract We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25GPa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30GPa, and the conductivity increases gradually with increasing pressure from 30GPa. However, the metallization predicted by theoretical calculation at 30--33GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10-3\Omega-1cm-1 at 37GPa and 2400K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction.
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| Keywords:
07.35.+k
72.20.-i
66.10.Ed
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Published: 01 November 2006
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| PACS: |
07.35.+k
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(High-pressure apparatus; shock tubes; diamond anvil cells)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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66.10.Ed
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(Ionic conduction)
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