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Theoretical Study of Field Intensity of THz Radiation from GaAs Large-Aperture Photoconductive Antennas |
SHI Wei; HOU Lei |
Department of Applied Physics, Xi’an University of Technology, Xi’an 710048 |
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Cite this article: |
SHI Wei, HOU Lei 2006 Chin. Phys. Lett. 23 2867-2870 |
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Abstract We simulate the THz radiation’s time domain waveforms of both the near field and the far field of a GaAs large aperture photoconductive antenna based on the current surge model. Because the micro-kinetic factors, such as transient state changes of current carrier’s mobility and lifetime of current carriers, are taken into account in the calculation, we find out the influences of these factors on the THz radiation intensity by changing the above parameters. The results are of guiding significance to design of high-power photoconductive THz radiation antenna materials.
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Keywords:
84.40.-x
42.65.Re
72.40.+w
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Published: 01 October 2006
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PACS: |
84.40.-x
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(Radiowave and microwave (including millimeter wave) technology)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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