| Original Articles |
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Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method |
| LI Chun-Yan1;LI Bo1;Lü Xian-Yi1;LI Ming-Ji1;WANG Zong-Li2;GU Chang-Zhi2;JIN Zeng-Sun1 |
| 1State Key Laboratory for Superhard Material, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012
2Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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LI Chun-Yan, LI Bo, Lü Xian-Yi et al 2006 Chin. Phys. Lett. 23 2856-2858 |
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Abstract Heavily boron-doped thick diamond films with higher superconducting transition temperatures have been prepared by electron assisted chemical vapour deposition method. The results of scanning electron microscopy, Raman spectroscopy, x-ray diffraction, and Hall effect indicate that the films have nice crystalline facets, a notable decrease in the growth rate, and an increase in the tensile stress. Meanwhile, the film resistivity decreases with the increase of the carrier concentration. Our measurements show that the films with 4.88×1020cm-3 and 1.61×1021cm-3 carrier concentration have superconductivity, with onset temperatures of 9.7K (8.9K for zero resistance) and 7.8K (6.1K for zero resistance), respectively.
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| Keywords:
74.78.-w
81.05.Uw
81.15.Gh
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Published: 01 October 2006
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| PACS: |
74.78.-w
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(Superconducting films and low-dimensional structures)
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81.05.Uw
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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