Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

Chin. Phys. Lett.

2006, Vol. 23

Issue (1): 256-258 DOI:

Original Articles

Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

LU Yu;YANG Zhi-Jian;PAN Yao-Bo;XU Ke;HU Xiao-Dong;ZHANG Bei;ZHANG Guo-Yi

School of Physics and State Key Laboratory for Mesoscopic Physics, Research Center for Wide Gap Semiconductor, Peking University 100871

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LU Yu, YANG Zhi-Jian, PAN Yao-Bo et al 2006 Chin. Phys. Lett. 23 256-258

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Abstract The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes (LEDs) grown by metalorganic chemical vapour deposition is investigated by using photoluminescence (PL) and high-resolution x-ray diffraction. The full width at half maximum of PL of Al doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.

Keywords: 85.60.Jb 85.40.Sz 78.67.De

Published: 01 January 2006

PACS:	85.60.Jb	(Light-emitting devices)
	85.40.Sz	(Deposition technology)
	78.67.De	(Quantum wells)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I1/0256

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	LU Yu
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	ZHANG Bei
	ZHANG Guo-Yi

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