| Original Articles |
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MBE Growth of Highly Relaxed Si0.45 Ge0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates |
| LU Xiang-Dang1;ZHANG Xiang-Jiu1;YANG Hong-Bin1;FAN Yong-Liang1;HUANG Wei-Ning2;SUN Yan-Qing3 |
| 1Surface Physics Laboratory, Fudan University, Shanghai 200433
2Department of Microelectronics, Fudan University, Shanghai 200433
3Department of Physics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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LU Xiang-Dang, ZHANG Xiang-Jiu, YANG Hong-Bin et al 2006 Chin. Phys. Lett. 23 220-222 |
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Abstract We investigate the molecular-beam-epitaxy growth of highly relaxed Si0.45Ge0.55 films with very low dislocation densities. By using the Si3N4 film as the mask material, the Si0.45Ge0.55 film can be grown on a compositionally stepwise graded SiGe buffer layer in 3μm×3μm windows on a Si (001) substrate. Raman scattering spectroscopy measurement shows that more than 90% strain of the Si0.45Ge0.55 film is relaxed, and almost neither misfit dislocation lines nor etch pits of thread dislocations could be observed when the sample is etched by the modified Schimmel etchant. We suggest that the results can be explained by influence of the edge-induced strain relaxation of the epitaxial film and the edge-induced stress of the mask material.
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| Keywords:
81.15.Hi
61.72.Ff
78.30.Er
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Published: 01 January 2006
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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78.30.Er
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(Solid metals and alloys ?)
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