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Effect of Microstructure of TiO2 Thin Films on Optical Band Gap Energy |
| TIAN Guang-Lei1,2;HE Hong-Bo1;SHAO Jian-Da1 |
| 1Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2Graduate School of the Chinese Academy of Sciences, Beijing 100039 |
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| Cite this article: |
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TIAN Guang-Lei, HE Hong-Bo, SHAO Jian-Da 2005 Chin. Phys. Lett. 22 1787-1789 |
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Abstract TiO2 coatings are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for four hours, the spectra and XRD patterns of TiO2 thin film are obtained. XRD patterns reveal that only anatase phase can be observed in TiO2 coatings regardless of the different annealing temperatures, and with the increasing annealing temperature, the grain size gradually increases. The relationship between the energy gap and microstructure of anatase is determined and discussed. The quantum confinement effect is observed that with the increasing grain size of TiO2 thin film, the band gap energy shifts from 3.4eV to 3.21eV. Moreover, other possible influence of the TiO2 thin-film microstructure, such as surface roughness and thin film absorption, on band gap energy is also expected.
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| Keywords:
78.20.-e
68.55.Jk
81.15.Ef
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Published: 01 July 2005
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