| Original Articles |
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Interface Properties of InAs/AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity |
| LI Zhi-Hua;GUO Li-Wei;WU Shu-Dong;WANG Wen-Xin;HUANG Qi;ZHOU Jun-Ming |
| Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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LI Zhi-Hua, GUO Li-Wei, WU Shu-Dong et al 2005 Chin. Phys. Lett. 22 1729-1731 |
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Abstract Two kinds of superlattice interfaces of InAs/AlSb superlattices are realized in an optimized interface growth process, where one is AlAs-like and the other is InSb-like grown on a relaxed AlSb buffer layer. The superlattice properties such as interface roughness and layer thickness are studied by grazing incidence x-ray reflectivity. The reflectivity curves are simulated by standard software till the simulation curves match well with the experimental curves. The simulation indicates that AlAs-like interfaces are much rougher than InSb-like interfaces. Grazing incidence x-ray reflectivity is also discussed as a powerful tool to assessing the structure properties of superlattices.
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| Keywords:
61.10.Kw
73.40.Kp
73.21.Cd
68.35.Ct
68.18.Fg
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Published: 01 July 2005
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| PACS: |
61.10.Kw
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.21.Cd
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(Superlattices)
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68.35.Ct
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(Interface structure and roughness)
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68.18.Fg
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(Liquid thin film structure: measurements and simulations)
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