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Large and Fast Resonant Third-Order Optical Nonlinearities of Silicon 2,3-Naphthalocyanine Bi (trihexylsilyloxide) |
FU Gang;Kazuo Kasatani;Hiroaki Okamoto;Shunsuke Takenaka |
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University, Tokiwadai, Ube 755-8611, Japan |
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Cite this article: |
FU Gang, Kazuo Kasatani, Hiroaki Okamoto et al 2005 Chin. Phys. Lett. 22 1687-1690 |
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Abstract Third-order optical nonlinearities of silicon 2,3-naphthalocyanine bis(trihexylsilyloxide) (SiNc) were measured by femtosecond degenerate four-wave mixing technique under resonant conditions. The time dependence of the signals indicates that the electronic response dominates the mechanism. The electronic molecular hyperpolarizability γe of SiNc was determined to be as high as 2×10-28 esu, which is the largest value reported so far to our knowledge. The electronic third-order susceptibility for a pure SiNc film has been measured to be 4×10-7esu. The large nonlinear susceptibility was discussed in terms of J-type molecular arrangement.
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Keywords:
42.65.An
42.65.Re
42.70.Jk
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Published: 01 July 2005
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PACS: |
42.65.An
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(Optical susceptibility, hyperpolarizability)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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42.70.Jk
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(Polymers and organics)
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