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A Silicon-on-Insulator-Based Thermo-Optic Waveguide Switch with Low Insertion Loss and Fast Response |
| LI Yan-Ping;YU Jin-Zhong;CHEN Shao-Wu |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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LI Yan-Ping, YU Jin-Zhong, CHEN Shao-Wu 2005 Chin. Phys. Lett. 22 1449-1451 |
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Abstract A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low insertion loss of 8±1dB for wavelength 1530--1580nm and fast response times of 4.6μs for rising edge and 1.9μs for falling edge. The extinction ratios of the two channels are 19.1 and 18dB, respectively.
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| Keywords:
42.82.Ds
42.82.Et
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Published: 01 June 2005
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| PACS: |
42.82.Ds
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(Interconnects, including holographic interconnects)
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42.82.Et
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(Waveguides, couplers, and arrays)
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