Chin. Phys. Lett.  2005, Vol. 22 Issue (6): 1446-1448    DOI:
Original Articles |
A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix
YANG Di;LI Yan-Ping;CHEN Shao-Wu;YU Jin-Zhong
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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YANG Di, LI Yan-Ping, CHEN Shao-Wu et al  2005 Chin. Phys. Lett. 22 1446-1448
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Abstract A 4×4 strictly nonblocking thermo-optic switch matrix implemented with a 2×2 Mach--Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8dB and 19.2dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270W--0.288W and the switching time is about 13±1μs.
Keywords: 42.82.Ds      42.82.Cr     
Published: 01 June 2005
PACS:  42.82.Ds (Interconnects, including holographic interconnects)  
  42.82.Cr (Fabrication techniques; lithography, pattern transfer)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I6/01446
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