| Original Articles |
|
|
|
|
A 4×4 Strictly Nonblocking Silicon-on-Insulator Thermo-Optic Switch Matrix |
| YANG Di;LI Yan-Ping;CHEN Shao-Wu;YU Jin-Zhong |
| State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
|
| Cite this article: |
|
YANG Di, LI Yan-Ping, CHEN Shao-Wu et al 2005 Chin. Phys. Lett. 22 1446-1448 |
|
|
|
|
Abstract A 4×4 strictly nonblocking thermo-optic switch matrix implemented with a 2×2 Mach--Zehnder switch unit was fabricated in silicon-on-insulator wafer. Insertion losses of the shortest and the longest path in the device are about 14.8dB and 19.2dB, respectively. The device presents a very low loss dependent on wavelength. For one switch unit, the power consumption needed for operation is measured to be 0.270W--0.288W and the switching time is about 13±1μs.
|
| Keywords:
42.82.Ds
42.82.Cr
|
|
|
Published: 01 June 2005
|
|
| PACS: |
42.82.Ds
|
(Interconnects, including holographic interconnects)
|
| |
42.82.Cr
|
(Fabrication techniques; lithography, pattern transfer)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
