| Original Articles |
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Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle |
| ZHANG Hao;ZHENG Hou-Zhi;XU Ping;PENG Hong-Ling,TAN Ping-Heng;YANG Fu-Hua;NI Hai-Qiao;ZENG Yu-Xin,
GAN Hua-Dong;ZHU Hui |
| State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHANG Hao, ZHENG Hou-Zhi, XU Ping et al 2005 Chin. Phys. Lett. 22 1405-1408 |
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Abstract We have fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32% and responsivity of 0.27A/W at 1.058μm with a full width at half maximum (FWHM) of 5nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0°to 60°, the peak-current wavelength shifts towards the short wavelength side by 37nm, while the quantum efficiency remains larger than 15%.
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| Keywords:
42.50.Ct
36.+c
78.66.Fd
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Published: 01 June 2005
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| PACS: |
42.50.Ct
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(Quantum description of interaction of light and matter; related experiments)
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71
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(Electronic structure of bulk materials )
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36.+c
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78.66.Fd
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(III-V semiconductors)
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