| Original Articles |
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Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of InxGa1-xN/GaN Multiple Quantum Wells |
| LÜ Wei1,2;LI Da-Bing3;LI Chao-Rong2;CHEN Gang1;ZHANG Ze4 |
| 1Department of Materials Science, College of Materials Science and Engineering, Jilin University, Changchun 130012
2Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
3Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,PO Box 912, Beijing 100083
4Beijing University of Technology, Beijing 100022 |
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| Cite this article: |
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LÜ, Wei, LI Da-Bing et al 2005 Chin. Phys. Lett. 22 971-974 |
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Abstract InxGaxN/GaN multiple quantum well (MQW) samples with strain-layer thickness larger/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations.
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| Keywords:
78.66.Fd
78.55.Cr
68.37.Lp
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Published: 01 April 2005
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