Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAlAs/InGaAs Layers

Chin. Phys. Lett.

2005, Vol. 22

Issue (4): 967-970 DOI:

Original Articles

Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAlAs/InGaAs Layers

LÜ Wei^1,2;LI Da-Bing³;ZHANG Zi-Yang³;LI Chao-Rong¹;ZHANG Ze⁴;XU Bo³;WANG Zhan-Gum³

¹Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 ²Department of Materials Science, College of Materials Science and Engineering, Jilin University, Changchun 130012 ³Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 Beijing University of Technology, Beijing 100022

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LÜ, Wei, LI Da-Bing et al 2005 Chin. Phys. Lett. 22 967-970

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Abstract Effects of rapid thermal annealing on the optical and structural properties of self-assembled InAs/GaAs quantum dots capped by the InAlAs/InGaAs combination layers are studied by photoluminescence and transmission electron microscopy. The photoluminescence measurement shows that the photoluminescence peak of the sample after 850°C rapid thermal annealing is blue shifted with 370meV and the excitation peak intensity increases by a factor of about 2.7 after the rapid thermal annealing, which indicates that the InAs quantum dots have experienced an abnormal transformation during the annealing. The transmission electron microscopy shows that the quantum dots disappear and a new InAlGaAs single quantum well structure forms after the rapid thermal annealing treatment. The transformation mechanism is discussed. These abnormal optical properties are attributed to the structural transformation of these quantum dots into a single quantum well.

Keywords: 78.66.Fd 68.37.Lp 68.65.Hb

Published: 01 April 2005

PACS:	78.66.Fd	(III-V semiconductors)
	68.37.Lp	(Transmission electron microscopy (TEM))
	68.65.Hb	(Quantum dots (patterned in quantum wells))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I4/0967

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	LI Chao-Rong
	ZHANG Ze
	XU Bo
	WANG Zhan-Gum

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