Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source

Chin. Phys. Lett.

2005, Vol. 22

Issue (4): 960-962 DOI:

Original Articles

Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source

WU Shu-Dong;GUO Li-Wei;WANG Wen-Xin;LI Zhi-Hua;NIU Ping-Juan;HUANG Qi;ZHOU Jun-Ming

Institute of Physics, Chinese Academy of Sciences, Beijing 100080

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WU Shu-Dong, GUO Li-Wei, WANG Wen-Xin et al 2005 Chin. Phys. Lett. 22 960-962

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Abstract The incorporation behaviour of arsenic and phosphorus in the GaAsP ternary alloy under phosphorus-rich conditions is studied based on the incorporation coefficient model and the growth diffusion model combined with the alloy composition data obtained by high resolution x-ray diffraction analysis. It is found that As adatoms have longer surface lifetime and longer migration length than those of P adatoms, which leads to an arsenic incorporation efficiency much higher than that of phosphorous. With the increase of arsenic flux, the surface lifetime of arsenic adatoms decreases due to the competition of As adatoms. The detailed analysis and discussion are given here.

Keywords: 78.55.Cr 68.55.Eg 73.60.Br

Published: 01 April 2005

PACS:	78.55.Cr	(III-V semiconductors)
	68.55.Eg
	73.60.Br

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I4/0960

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	WU Shu-Dong
	GUO Li-Wei
	WANG Wen-Xin
	LI Zhi-Hua
	NIU Ping-Juan
	HUANG Qi
	ZHOU Jun-Ming

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