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Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene |
| WANG Wei1;SHI Jia-Wei1;LIANG Chang1;ZHANG Hong-Mei1;LIU Ming-Da1;QUAN Bao-Fu1;GUO Shu-Xu1,FANG Jun-Feng2;MA Dong-Ge2 |
| 1National Key Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130012
2State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 |
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| Cite this article: |
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WANG Wei, SHI Jia-Wei, LIANG Chang et al 2005 Chin. Phys. Lett. 22 496-498 |
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Abstract Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm2/Vs, whereas the field-effect electron mobility was about 0.02cm2/Vs for n-channel.
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| Keywords:
85.30.Tv
72.80.Le
72.20.Fr
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Published: 01 February 2005
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| PACS: |
85.30.Tv
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(Field effect devices)
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72.80.Le
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(Polymers; organic compounds (including organic semiconductors))
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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