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Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique |
Raid A. Ismail1;Ibrahim Ramadhan1;Aseel Mustafa1 |
sup>1Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq
2Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq
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Cite this article: |
Raid A. Ismail, Ibrahim Ramadhan, Aseel Mustafa 2005 Chin. Phys. Lett. 22 2977-2979 |
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Abstract Cu2O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500°C for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around (1.1×10-5Ω-1cm-1) at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.
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Keywords:
81.15.Gh
73.61.-r
73.50.Lw
78.66.-w
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Published: 01 November 2005
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PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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73.61.-r
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(Electrical properties of specific thin films)
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73.50.Lw
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(Thermoelectric effects)
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78.66.-w
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(Optical properties of specific thin films)
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Abstract
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