Chin. Phys. Lett.  2005, Vol. 22 Issue (11): 2977-2979    DOI:
Original Articles |
Growth and Characterization of Cu2O Films Made by Rapid Thermal Oxidation Technique
Raid A. Ismail1;Ibrahim Ramadhan1;Aseel Mustafa1
sup>1Department of Applied Physics, Ministry of Sciences and Technology, Baghdad, Iraq 2Department of Physics, College of Science, University of Al-Mustansiriyah, Iraq
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Raid A. Ismail, Ibrahim Ramadhan, Aseel Mustafa 2005 Chin. Phys. Lett. 22 2977-2979
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Abstract Cu2O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxidation of Cu at 500°C for 45s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around (1.1×10-5Ω-1cm-1) at 300K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.
Keywords: 81.15.Gh      73.61.-r      73.50.Lw      78.66.-w     
Published: 01 November 2005
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  73.61.-r (Electrical properties of specific thin films)  
  73.50.Lw (Thermoelectric effects)  
  78.66.-w (Optical properties of specific thin films)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I11/02977
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