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Dielectric Properties of Multilayered Ba0.5Sr0.5TiO3 Thin Films Deposited on ITO-Coated Corning 1737 Glass by rf Magnetron Sputtering |
LIN Ming-Tong1;CHEN Guo-Rong1;YANG Yun-Xia1;XIAO Tian2;XU Yi2;LOU Jun-Hui2;CHEN Chen-Xi2 |
1Key Laboratory for Superfine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237
2SVA Electron Co. Ltd., Shanghai 200081 |
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Cite this article: |
LIN Ming-Tong, CHEN Guo-Rong, YANG Yun-Xia et al 2005 Chin. Phys. Lett. 22 2947-2949 |
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Abstract A new stacking method via variation of substrate temperature in rf magnetron sputter is used to fabricate polycrystalline/polycrystalline Ba0.5Sr0.5TiO3 thin films with higher dielectric constant, higher breakdown strength and lower leakage current densities than those prepared by a conventional deposition method. The improved figure of merit G (ε0εrEb) of the Ba0.5Sr0.5TiO3 thin films implies that they are a feasible insulation layer for thin film electroluminescent devices.
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Keywords:
77.55.+f
73.61.Ng
68.55.Jk
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Published: 01 November 2005
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