| Original Articles |
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Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering |
| ZHOU Sheng-Qiang;WU Ming-Fang;YAO Shu-De;ZHANG Guo-Yi |
| School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De et al 2005 Chin. Phys. Lett. 22 2700-2703 |
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Abstract The composition, elastic strain and structural defects of InGaN/GaN multiple quantum wells (MQWs) are comparatively investigated by using x-ray diffraction (XRD), transmission electron microscopy and Rutherford backscattering/channelling. The InGaN well layers are fully strained on GaN, i.e. the degree of relaxation is zero. The multilayered structure has a clear defined periodic thickness and abrupt interfaces. The In composition is deduced by XRD simulation. We show how the periodic structure, the In composition, the strain status and the crystalline quality of the InGaN/GaN MQWs can be determined and cross-checked by various techniques.
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81.05.Ea
61.10.Nz
37.Lp
82.80.Yc
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Published: 01 October 2005
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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61.10.Nz
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68
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(Surfaces and interfaces; thin films and nanosystems (structure and nonelectronic properties))
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37.Lp
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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