| Original Articles |
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Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures |
| YU Ping1;QIU Dong-Jiang1,2;WU Hui-Zhen1 |
| 1Department of Physics, Zhejiang University, Hangzhou 310027
2State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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YU Ping, QIU Dong-Jiang, WU Hui-Zhen 2005 Chin. Phys. Lett. 22 2688-2691 |
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Abstract Cubic phase MgxZn1-xO/MgO multilayer heterostructures (c-MgxZn1-xO/MgO MHs) are grown on Si(100) and quartz substrates by reactive electron beam evaporation at low temperature (250°C). Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-xO/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly (100)-oriented. Optical transmission investigations of c-MgxZn1-xO/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 396nm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect.
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| Keywords:
78.66.Hf
78.67.-n
79.60.Jv
81.07.-b
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Published: 01 October 2005
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| PACS: |
78.66.Hf
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(II-VI semiconductors)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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