| Original Articles |
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Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma |
| YE Chao;YU Xiao-Zhu;WANG Ting-Ting;NING Zhao-Yuan;XIN Yu;JIANG Mei-Fu |
| School of Physics Science and Technology, Key Laboratory of Thin Films, Soochow University, Suzhou 215006 |
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| Cite this article: |
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YE Chao, YU Xiao-Zhu, WANG Ting-Ting et al 2005 Chin. Phys. Lett. 22 2670-2673 |
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Abstract We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by decamethylcyclopentasiloxane (DMCPS) electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For the films deposited only using DMCPS, the minimum k is as low as 2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48 due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.
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| Keywords:
77.55.+f
78.30.Am
81.15.Gh
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Published: 01 October 2005
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| PACS: |
77.55.+f
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78.30.Am
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(Elemental semiconductors and insulators)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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