| Original Articles |
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Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films |
| WU Chun-Xia1,2;LU You-Ming1;SHEN De-Zhen1;WEI Zhi-Peng1,2,3;ZHANG Zhen-Zhong1;LI Bing-Hui1;ZHANG Ji-Ying1;LIU Yi-Chun1;FAN Xi-Wu1 |
| 1Kay Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2Graduate School of Chinese Academy of Sciences, Beijing 100049
3Department of Science, Changchun University of Science and Technology, Changchun 130022 |
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| Cite this article: |
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WU Chun-Xia, LU You-Ming, SHEN De-Zhen et al 2005 Chin. Phys. Lett. 22 2655-2658 |
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Abstract We investigate the origin of ultraviolet (UV) emission from Mg0.12Zn0.88O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.
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| Keywords:
73.61.Ga
81.40.Tv
78.55.Et
78.66.Hf
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Published: 01 October 2005
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73.61.Ga
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(II-VI semiconductors)
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81.40.Tv
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(Optical and dielectric properties related to treatment conditions)
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78.55.Et
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(II-VI semiconductors)
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78.66.Hf
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(II-VI semiconductors)
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