| Original Articles |
|
|
|
|
Self-Starting Passively Mode-Locking All-Solid-State Laser with GaAs Absorber Grown at Low Temperature |
| JIA Yu-Lei1;LING Wei-Jun1;WEI Zhi-Yi1;WANG Yong-Gang2;MA Xiao-Yu2 |
| 1Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
|
| Cite this article: |
|
JIA Yu-Lei, LING Wei-Jun, WEI Zhi-Yi et al 2005 Chin. Phys. Lett. 22 2575-2577 |
|
|
|
|
Abstract We realize a stable self-starting passively mode-locking all-solid-state laser by using novel GaAs mirrors as the absorber and output coupler. The GaAs mirror is grown by the technology of metal organic chemical vapour deposition at low temperature. With such an absorber as the output coupler in the laser resonator, laser pulses with duration of 42ps were generated at a repetition rate of 400MHz, corresponding to the average power of 590mW.
|
| Keywords:
42.65.Re
42.60.Fc
42.55.Xi
42.60.Lh
|
|
|
Published: 01 October 2005
|
|
| PACS: |
42.65.Re
|
(Ultrafast processes; optical pulse generation and pulse compression)
|
| |
42.60.Fc
|
(Modulation, tuning, and mode locking)
|
| |
42.55.Xi
|
(Diode-pumped lasers)
|
| |
42.60.Lh
|
(Efficiency, stability, gain, and other operational parameters)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
