| Original Articles |
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InGaAs Photodetectors Cut-off at 1.9μm Grown by Gas-Source Molecular Beam Epitaxy |
| ZHANG Yong-Gang;HAO Guo-Qiang;GU Yi;ZHU Cheng;LI Ai-Zhen;LIU Tian-Dong |
| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHANG Yong-Gang, HAO Guo-Qiang, GU Yi et al 2005 Chin. Phys. Lett. 22 250-253 |
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Abstract Using a linear graded InxGa1-xAs as the buffer layer, positive-intrinsic-negative wavelength-extended In0.6Ga0.4 As photodetectors with 50% cut-off wavelength of 1.9μm at room temperature were grown by using gas-source molecular beam epitaxy, and their performance over a wide temperature range has been extensively investigated. The detectors show typical dark current at bias voltage 50mV and the resistance--area product R0A of 7nA/765\Ωcm2 and 31pA/404kΩcm2 at 290K and 210K, respectively. The thermal activation energy of the dark current in the temperature range 250--350K is 0.488eV.
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| Keywords:
85.60.Gz
73.61.Ey
81.15.Hi
73.40.Kp
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Published: 01 January 2005
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.61.Ey
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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