| Original Articles |
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Molecular Beam Epitaxy Growth and Photoluminescence of Type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs Bilayer Quantum Well |
| XU Xiao-Hua;NIU Zhi-Chuan;NI Hai-Qiao;XU Ying-Qiang;ZHANG Wei;HE Zheng-Hong;HAN Qin;WU Rong-Han |
| National Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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XU Xiao-Hua, NIU Zhi-Chuan, NI Hai-Qiao et al 2004 Chin. Phys. Lett. 21 1831-1834 |
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Abstract We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/Iny Ga1-yAs)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.
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| Keywords:
81.15.Hi
78.55.Cr
78.67.De
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Published: 01 September 2004
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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78.55.Cr
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(III-V semiconductors)
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78.67.De
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(Quantum wells)
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