Chin. Phys. Lett.  2004, Vol. 21 Issue (9): 1811-1814    DOI:
Original Articles |
Electrical Characteristics and Microstructures of Sm2O3-Doped Bi4Ti3O12 Ceramics
CHEN Min1,3;WANG Yu1,2;LIU Zu-Li2;DONG Liang1;YANG Xin-Sheng1;YAO Kai-Lun1,2
1Department of Physics and State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074 2National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008 3Department of Physics, Hunan Institute of Science and Technology, Yueyang 414000
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CHEN Min, WANG Yu, LIU Zu-Li et al  2004 Chin. Phys. Lett. 21 1811-1814
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Abstract We investigate the electrical properties of Sm-doped Bi4-xSmxTi3O12 (BST) ceramics prepared by a conventional electroceramic technique. The x-ray diffraction analysis reveals the Bi-layered perovskite structure in all samples. The SEM micrographs show randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0, the current--voltage characteristics exhibit negative differential resistance behaviour and the P--V hysteresis loops are characterized by large leakage current, whereas for the samples with x=0.6 and 0.8, the current--voltage characteristics show simple ohmic behaviour and the P--V hysteresis loops are of the saturated and undistorted hysteresis. The remanent polarization and coercive field of the BST ceramic with x=0.8 are above 32μC/cm2 and 70kV/cm, respectively.
Keywords: 77.84.Bw      77.84.Dy     
Published: 01 September 2004
PACS:  77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)  
  77.84.Dy  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I9/01811
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CHEN Min
WANG Yu
LIU Zu-Li
DONG Liang
YANG Xin-Sheng
YAO Kai-Lun
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