A Thermally Activated Exciton--Exciton Collision Process in ZnO Microrods

Chin. Phys. Lett.

2004, Vol. 21

Issue (8): 1640-1643 DOI:

Original Articles

A Thermally Activated Exciton--Exciton Collision Process in ZnO Microrods

ZHAO Dong-Xu¹;LIU Yi-Chun^1,2;SHEN De-Zhen¹;LU You-Ming¹;ZHANG Ji-Ying¹;FAN Xi-Wu¹

¹The Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022 ²Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024

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ZHAO Dong-Xu, LIU Yi-Chun, SHEN De-Zhen et al 2004 Chin. Phys. Lett. 21 1640-1643

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Abstract Room-temperature P-band emission induced by an exciton--exciton collision process was observed in ZnO micro-rods. Both temperature- and excitation-intensity-dependent photoluminescence (PL) measurements were conducted. The excitation-intensity-dependent measurement illustrated that the P-band emission could occur at far lower excitation intensity than that reported in the literature. Higher-order transitions were also observed at the excitation intensity of 7.1kW/cm² or above. The temperature-dependent PL showed that the P-band emission process was thermally activated. It is suggested that both the density and activity of free excitons played important roles in the exciton--exciton collision process.

Keywords: 78.55.Et 78.67.Lt 78.55.Hx 81.05.Ea

Published: 01 August 2004

PACS:	78.55.Et	(II-VI semiconductors)
	78.67.Lt	(Quantum wires)
	78.55.Hx	(Other solid inorganic materials)
	81.05.Ea	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I8/01640

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	ZHAO Dong-Xu
	LIU Yi-Chun
	SHEN De-Zhen
	LU You-Ming
	ZHANG Ji-Ying
	FAN Xi-Wu

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