| Original Articles |
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Silicon-on-Insulating Multi-Layers for Total-Dose Irradiation Hardness |
| ZHANG En-Xia1;YI Wan-Bing1;LIU Xiang-Hua2;CHEN Meng1;LIU Zhong-Li3;Wang Xi1 |
| 1Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong
3Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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ZHANG En-Xia, YI Wan-Bing, LIU Xiang-Hua et al 2004 Chin. Phys. Lett. 21 1600-1603 |
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Abstract Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal--oxide--semiconductor (PMOS) transistors and metal--semiconductor--insulator--semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3×105 rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.
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| Keywords:
61.72.Tt
68.37.Lp
85.40.Ry
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Published: 01 August 2004
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| PACS: |
61.72.Tt
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68.37.Lp
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(Transmission electron microscopy (TEM))
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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