| Original Articles |
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Anodic-Aluminium-Oxide Template-Assisted Growth of ZnO Nanodots on Si (100) at Low Temperature |
| XU Tian-Ning1;WU Hui-Zhen1,2;LAO Yan-Feng2;QIU Dong-Jiang;CHEN Nai-Bo;DAI Ning3 |
| 1Department of Physics, Zhejiang University, Hangzhou 310028
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083 |
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| Cite this article: |
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XU Tian-Ning, WU Hui-Zhen, LAO Yan-Feng et al 2004 Chin. Phys. Lett. 21 1327-1329 |
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Abstract ZnO nanodots have been grown on Si (100) assisted by anodic aluminium oxide (AAO) template at low temperature (350°C). Regular arrangement to a certain extent in local for ZnO nanodots is observed, and the average diameter of nanodots is about 9.7 nm. Photoluminescence studies at room temperature for photon energy between 2.0 and 3.6 eV reveal a strong single exciton peak at 3.274 eV (378.8 nm) with the green emission fully quenched. Narrow full width at half maximum (FWHM) of the UV emission band (0.14 eV) suggests the as-grown ZnO nanodots have a narrow size distribution.
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| Keywords:
71.55.Gs
78.67.-n
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Published: 01 July 2004
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| PACS: |
71.55.Gs
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(II-VI semiconductors)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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