Chin. Phys. Lett.  2004, Vol. 21 Issue (4): 720-722    DOI:
Original Articles |
Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures
WEN Bo;JIANG Ruo-Lian;ZHOU Jian-Jun;JI Xiao-Li;LIANG Ling-Yan;KONG Yue-Chan;SHEN Bo;ZHANG Rong;ZHENG You-Dou
Department of Physics and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjing University, Nanjing 210093
Cite this article:   
WEN Bo, JIANG Ruo-Lian, ZHOU Jian-Jun et al  2004 Chin. Phys. Lett. 21 720-722
Download: PDF(373KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The unintentionally doped samples of Al0.22Ga0.78N/GaN/Al0.22Ga0.78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced charge and free-carrier charge distributions have been demonstrated and the energy band profile has also been calculated. The results indicate the existence of two-dimensional electron gas (2DEG) and hole well at the heterointerfaces. By means of variable temperature Hall measurements, the carrier mobility and the sheet carrier density were measured from 300 to 77 K. The significant increment of carrier mobility at low temperature also verified the existence of the 2DEG.
Keywords: 73.40.Kp      71.20.Nr     
Published: 01 April 2004
PACS:  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  71.20.Nr (Semiconductor compounds)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I4/0720
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
WEN Bo
JIANG Ruo-Lian
ZHOU Jian-Jun
JI Xiao-Li
LIANG Ling-Yan
KONG Yue-Chan
SHEN Bo
ZHANG Rong
ZHENG You-Dou
Related articles from Frontiers Journals
[1] LIU Shao-Qing, HAN Qin, ZHU Bin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, WANG Win, NIU Zhi-Chuan. Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates[J]. Chin. Phys. Lett., 2012, 29(3): 720-722
[2] XIE Zi-Li**, ZHANG Rong, LIU Bin, XIU Xiang-Qian, SU Hui, LI Yi, HUA Xue-Mei, ZHAO Hong, CHEN Peng, HAN Ping, SHI Yi, ZHENG You-Dou . Growth and Properties of Blue and Amber Complex Light Emitting InGaN/GaN Multi-Quantum Wells[J]. Chin. Phys. Lett., 2011, 28(8): 720-722
[3] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 720-722
[4] Sur S., Ö, ztürk Z., Ö, zta&scedil, M.**, Bedir M., Ö, zdemir Y. . Effect of Water Concentration on the Characterization of Sprayed Cd0.5Zn0.5S Films[J]. Chin. Phys. Lett., 2011, 28(6): 720-722
[5] WANG Yong, **, YU Nai-Sen, LI Ming, LAU Kei-May . Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(5): 720-722
[6] BAI Li-Na, LIAN Jian-She**, JIANG Qing . Optical and Electronic Properties of Wurtzite Structure Zn1−xMgxO Alloys[J]. Chin. Phys. Lett., 2011, 28(11): 720-722
[7] ZHOU Bin, WANG Jin-Yan**, MENG Di, LIN Shu-Xun, FANG Min, DONG Zhi-Hua, YU Min, HAO Yi-Long, Cheng P. WEN . A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator[J]. Chin. Phys. Lett., 2011, 28(10): 720-722
[8] CAO Dong-Sheng, LU Hai, **, CHEN Dun-Jun, HAN Ping, ZHANG Rong, ZHENG You-Dou . A 1100+V AlGaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination[J]. Chin. Phys. Lett., 2011, 28(1): 720-722
[9] YIN Xue-Song, TANG Wu, WENG Xiao-Long, DENG Long-Jiang. Co-occurrence of Dominant Direct and Indirect Transitions in Low Temperature Sputtered Indium Tin Oxide Thin Films on Polymers[J]. Chin. Phys. Lett., 2010, 27(8): 720-722
[10] GUO Yan, LIU Xiang-Lin, SONG Hua-Ping, YANG An-Li, ZHENG Gao-Lin, WEI Hong-Yuan, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy[J]. Chin. Phys. Lett., 2010, 27(6): 720-722
[11] LIU Hong-Gang, JIN Zhi, SU Yong-Bo, WANG Xian-Tai, CHANG Hu-Dong, ZHOU Lei, LIU Xin-Yu, WU De-Xin. Extrinsic Base Surface Passivation in High Speed “Type-II'” GaAsSb/InP DHBTs Using an InGaAsP Ledge Structure[J]. Chin. Phys. Lett., 2010, 27(5): 720-722
[12] GUO Mei-Li, ZHANG Xiao-Dong, LIANG Chun-Tian, JIA Guo-Zhi. Mechanism of Visible Photoactivity of F-Doped TiO2[J]. Chin. Phys. Lett., 2010, 27(5): 720-722
[13] ZHU Bin, HAN Qin, YANG Xiao-Hong, NI Hai-Qiao, HE Ji-Fang, NIU Zhi-Chuan, WANG Xin, WANG Xiu-Ping, WANG Jie. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs[J]. Chin. Phys. Lett., 2010, 27(3): 720-722
[14] JI Hai-Ming, YANG Tao, CAO Yu-Lian, XU Peng-Fei, GU Yong-Xian, MA Wen-Quan, WANG Zhan-Guo. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2010, 27(2): 720-722
[15] DENG Hui-Yong**, WANG Qi-Wei, TAO Jun-Chao, WU Jie, HU Shu-Hong, CHEN Xin, DAI Ning***. Electrical Property of Infrared-Sensitive InAs Solar Cells[J]. Chin. Phys. Lett., 2010, 27(11): 720-722
Viewed
Full text


Abstract