| Original Articles |
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Two-Step Growth of MgO Films on Sapphire (0001) Substrates by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy |
| MEI Zeng-Xia;DU Xiao-Long;ZENG Zhao-Quan;GUO Yang;WANG Jian;JIA Jin-Feng;XUE Qi-Kun |
| State Key Laboratory for Surface Science, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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MEI Zeng-Xia, DU Xiao-Long, ZENG Zhao-Quan et al 2004 Chin. Phys. Lett. 21 410-413 |
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Abstract We report on the growth of rock salt MgO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy. A two-step method, i.e., high temperature epilayer growth after low-temperature buffer layer growth, was adopted to obtain the single crystal MgO film. The epitaxial orientationship between the MgO epilayer and the sapphire (0001) substrate was studied by using in-situ reflection high energy electron diffraction and ex-situ x-ray diffraction, and it is found that the MgO film grows with [111] orientation. The role of the low temperature buffer layer in the improvement of crystal quality of the MgO epilayer is discussed based on the cross-sectional scanning electron microscopy.
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| Keywords:
81.15.Hi
68.55.-a
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Published: 01 February 2004
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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68.55.-a
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(Thin film structure and morphology)
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