| Original Articles |
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Induced Nucleation of Diamond Films on ZnS Substrates Precoated with Ceramic Interlayer |
| GAO Xu-Hui1;LU Fan-Xiu1;TONG Yu-Mei1;GUO Hui-Bin1;TANG Wei-Zhong1;LI Cheng-Ming1;CHEN Guang-Chao1;YU Huai-Zhi2;CHENG Hong-Fan2;YANG Hai2 |
| 1School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083
2General Research Institute for Nonferrous Metals, Beijing 100088 |
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| Cite this article: |
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GAO Xu-Hui, LU Fan-Xiu, TONG Yu-Mei et al 2004 Chin. Phys. Lett. 21 406-409 |
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Abstract We attempt to coat a multi-spectrum chemical-vapor-deposition ZnS substrate with smooth crystalline diamond films on the top of properly designed ceramic interlayer, which provides protection for ZnS against corrosion by the H2-CH4 microwave plasma and mitigates the thermal expansion coefficient mismatching between diamond and ZnS. However, difficulties in the homogenous diamond nucleation on a ceramic interlayer were encountered. It was found that high rate nucleation of diamond could be induced by a metal or semiconductor mask placed on the top of ZnS.
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| Keywords:
81.15.Gh
68.55.-a
78.20.-e
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Published: 01 February 2004
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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68.55.-a
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(Thin film structure and morphology)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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