| Original Articles |
|
|
|
|
Structural and Electrical Properties of Amorphous Hydrogen Carbon-Nitrogen Films |
| SUO Da-Cheng1;LIU Yi-Chun1,2;LIU Yan1;QI Xiu-Ying1;ZHONG Dian-Qiang1 |
| 1Center for Advanced Opto-Electronic Functional Material Research, Northeast Normal University, Changchun 130024
2Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanism and Physics, Chinese Academy of Sciences, Changchun 130021 |
|
| Cite this article: |
|
SUO Da-Cheng, LIU Yi-Chun, LIU Yan et al 2004 Chin. Phys. Lett. 21 400-402 |
|
|
|
Abstract Amorphous hydrogenated carbon-nitrogen (a-C:H:(N)) films with different nitrogen contents have been deposited by using rf-sputtering of a high purity graphite target in an Ar-H2-N2 atmosphere. Transmittance and reflectance spectra are used to characterize the Tauc gap and absorption coefficients in the wavelength range 0.185-3.2μm. The temperature dependence of conductivity demonstrates a hopping mechanism of the Fermi level in the temperature range of 77-300 K. The density of state at the Fermi level is derived from the direct current conductivity. The photoluminescence properties of a-C:H:N films were investigated. The photoluminescence peak has a blue shift with increasing excitation energy. These results are discussed on the basis of a model in which the different sp2 clusters dispersed in sp3 matrices.
|
| Keywords:
78.55.Hx
78.66.Jg
78.30.Ly
61.43.Dq
|
|
|
Published: 01 February 2004
|
|
| PACS: |
78.55.Hx
|
(Other solid inorganic materials)
|
| |
78.66.Jg
|
(Amorphous semiconductors; glasses)
|
| |
78.30.Ly
|
(Disordered solids)
|
| |
61.43.Dq
|
(Amorphous semiconductors, metals, and alloys)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
