Structure, Electrical, and Optical Properties of Nb-doped BaTiO<suB>3</suB> Thin Films Grown by Laser Molecular Beam Epitaxy

Chin. Phys. Lett.

2004, Vol. 21

Issue (2): 396-399 DOI:

Original Articles

Structure, Electrical, and Optical Properties of Nb-doped BaTiO₃ Thin Films Grown by Laser Molecular Beam Epitaxy

GUO Hai-Zhong;LIU Li-Feng;LU Hui-Bin;FEI Yi-Yan;XIANG Wen-Feng;ZHOU Yue-Liang;CHEN Zheng-Hao

Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080

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GUO Hai-Zhong, LIU Li-Feng, LU Hui-Bin et al 2004 Chin. Phys. Lett. 21 396-399

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Abstract Structure, electrical, and optical properties of Nb-doped BaTiO₃ (Nb:BTO) thin films on MgO substrates grown by laser molecular beam epitaxy with the increasing Nb content were investigated. The Nb:BTO thin films with high crystallinity are epitaxially grown on MgO substrates. With more Nb-doped content, the impurity phases are found in Nb:BTO thin films. Hall measurement at room temperature confirms that the charge carriers of the Nb:BTO thin films are n-type. When the Nb-doped content increases, the carrier concentration and carrier mobility increase. Meanwhile the optical transmittance decreases with the increase of the Nb-doping, and the width of the forbidden band in each group is not affected by the presence of Nb in the samples. Raman spectra show that the structural phase transition may occur with the increase of the Nb-doping content, in the meantime more defects and impurities exist in the Nb:BTO thin films.

Keywords: 77.84.Dy 73.50.-h 78.70.Ck 78.30.j

Published: 01 February 2004

PACS:	77.84.Dy
	73.50.-h	(Electronic transport phenomena in thin films)
	78.70.Ck	(X-ray scattering)
	78.30.j

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I2/0396

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	GUO Hai-Zhong
	LIU Li-Feng
	LU Hui-Bin
	FEI Yi-Yan
	XIANG Wen-Feng
	ZHOU Yue-Liang
	CHEN Zheng-Hao

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