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Short-Wavelength Recording Properties of TeOx Thin Films |
| LI Qing-Hui;GU Dong-Hong;GAN Fu-Xi |
| Research Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, PO Box 800-211, Shanghai 201800 |
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| Cite this article: |
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LI Qing-Hui, GU Dong-Hong, GAN Fu-Xi 2004 Chin. Phys. Lett. 21 320-323 |
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Abstract We prepare TeOx thin films by vacuum evaporation of TeO2 powder. It is found that the as-deposited TeOx films can represent a two-component system comprising crystalline tellurium particles dispersed in an amorphous TeO2 matrix. Results of the static recording test show that the TeOx films have good writing sensitivity for short-wavelength laser beam (514.5 nm). Primary results of the dynamic recording test at 514.5 nm are also reported. The carrier-to-noise ratio of 30 dB is obtained for the disk using a TeOx film as the recording medium. Atomic force microscopy is used to study the microstructure of recorded marks. Micro-area morphology images show that the marks are mechanically deformed, and depressions and bulges have been imaged in the recorded marks, resulting in the scattering of the reading laser beam. The analytical results of transmission electron microscopy show that there is not obvious difference between the phase states of the tellurium particles before and after laser irradiation. Recording mechanism of the TeOx thin films are discussed based on the experimental results.
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| Keywords:
42.70.Ln
68.55.Jk
81.15.Ef
83.80.Pc
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Published: 01 February 2004
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