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Freestanding a-Si Thin Film Transistor for Room-Temperature Infrared Detection |
| DONG Liang;YUE Rui-Feng;LIU Li-Tian;ZHANG Wan-Jie |
| Institute of Microelectronics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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DONG Liang, YUE Rui-Feng, LIU Li-Tian et al 2004 Chin. Phys. Lett. 21 262-265 |
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Abstract We present the fabrication and characterization of a novel uncooled infrared sensor for room-temperature infrared imaging. The sensitive element of the sensor is a freestanding amorphous silicon thin film transistor (a-Si TFT) with the temperature coefficient of the drain current (TCC) of 0.015-0.08/K. The TCC value is sensitive to the ambient temperature and can be controlled by the gate voltage of the a-Si TFT. The complete procedures based on the porous silicon micromachining technique for fabricating thermally isolated air bridges are described. The isolation structures have a thermal conductance of 5 x 10-6W/K and a thermal capacitance of 4.9 x 10-8J/K. The effects of the gate voltage on the performance figures such as responsivity, noise voltage and detectivity are described and analysed in details. The maximum detectivity reaches 4.33 x 10-8cmHz1/2W-1 at a chopping frequency of 27 Hz and a gate voltage of -15 V.
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| Keywords:
07.10.Cm
85.60.Gz
81.05.Gc
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Published: 01 February 2004
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| PACS: |
07.10.Cm
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(Micromechanical devices and systems)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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81.05.Gc
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(Amorphous semiconductors)
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