Chin. Phys. Lett.  2004, Vol. 21 Issue (12): 2504-2506    DOI:
Original Articles |
esonant Optical Absorption in Semiconductor Quantum Wells
YU Li-Yuan;CAO Jun-Cheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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YU Li-Yuan, CAO Jun-Cheng 2004 Chin. Phys. Lett. 21 2504-2506
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Abstract We have calculated the intraband photon absorption coefficients of hot two-dimensional electrons interacting with polar-optical phonon modes in quantum wells. The dependence of the photon absorption coefficients on the photon wavelength λ is obtained both by using the quantum mechanical theory and by the balance-equation theory. It is found that the photon absorption spectrum displays a local resonant maximum, corresponding to LO energy, and the absorption peak vanishes with increasing the electronic temperature.

Keywords: 73.21.Fg      78.67.-n      78.67.De      78.40.Fy     
Published: 01 December 2004
PACS:  73.21.Fg (Quantum wells)  
  78.67.-n (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)  
  78.67.De (Quantum wells)  
  78.40.Fy (Semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I12/02504
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