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Ultrafast Photoelectric Effects in Heterojunctions of La0.7Sr0.3MnO3 and Si |
Lü Hui-Bin;JIN Kui-Juan;HUANG Yan-Hong;HE Meng;ZHAO Kun;ZHOU Yue-Liang;CHENG Bo-Lin;CHEN Zheng-Hao;DAI Shou-Yu;YANG Guo-Zhen |
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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Cite this article: |
Lü Hui-Bin, JIN Kui-Juan, HUANG Yan-Hong et al 2004 Chin. Phys. Lett. 21 2308-2309 |
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Abstract Ultrafast photoelectric effects have been observed in p--n heterojunctions of La0.7Sr0.3MnO3(LSMO)/Si and LSMO/SrTiO3-/Si for the first time. The rise time was about 1 ns and the full width at half maximum was about 2 ns for the photovoltaic pulse when the heterojunction was irradiated by a laser of ~25 ps pulse duration and 1064 nm wavelength. The photovoltaic sensitivity was as large as 435 mV/mJ for a 1064 nm laser pulse. No such pulse was observed with irradiation from a pulsed 10.6 μm CO2 laser.
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Keywords:
85.30.Kk
72.40.+w
67.70.+n
42.50.Vk
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Published: 01 November 2004
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