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Structures and Properties of Zr--N Films Prepared by ECR-Microwave Plasma Source Enhanced Direct-Current Magnetron Sputtering Under Different N2 Partial Pressures |
| LIU Tian-Wei1,2;DENG Xin-Lu1;WAN Xiao-Ying2;WANG Ying-Min1;ZOU Jian-Xin1;DONG Chuang1 |
| 1State Key Laboratory of Materials Modification, Dalian University of Technology, Dalian 116024
2China Academy of Engineering Physics, Mianyang 621900 |
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| Cite this article: |
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LIU Tian-Wei, DENG Xin-Lu, WAN Xiao-Ying et al 2004 Chin. Phys. Lett. 21 2008-2011 |
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Abstract ZrN thin films were prepared on 45# steel by using ECR-microwave plasma source enhanced dc magnetron sputtering. The increase of the N2 partial pressure PN2 leads to phase transitions from ZrN and an orthorhombic ZrNx phase to an amorphous phase. At PN2=1.1×10-2Pa to 4.5×10-2Pa, the films contain both ZrN and ZrNx (a=0.3585, b=0.4443, c=0.5798nm). At PN2=5.0×10-2Pa, the film shows a strong tendency towards the amorphous phase. The N concentration at different PN2 varies from 7.73 to 66.96% according to electron probe analysis. The microhardness of the samples, varying from 19.82GPa to 26.73GPa, first increases and then decreases with increasing PN2. The hardest sample has a wear rate of about 4.5×10-5mg/min. The property changes are relative to the film structure due to different N2 partial pressures.
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52.77.Dq
81.15.Jj
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Published: 01 October 2004
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| PACS: |
52.77.Dq
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(Plasma-based ion implantation and deposition)
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81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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