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X-Ray Photoelectron Spectroscopy Analysis of the Electron Beam
Treated SiC Films Before and After Hydrogen Ion Irradiation |
| HUANG Ning-Kang;WANG De-Zhi;ZHOU Ping;XIONG QI |
| Key Laboratory for Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 |
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| Cite this article: |
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HUANG Ning-Kang, WANG De-Zhi, ZHOU Ping et al 2004 Chin. Phys. Lett. 21 61-64 |
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Abstract SiC films deposited with rf magnetron sputtering followed by electron beam alloying were irradiated by hydrogen ion with an energy of 5 keV and a dose of 1 x 1018 ions/cm2. The x-ray photoelectron spectroscopy analysis was used to investigate the irradiation effects of hydrogen ion on SiC. The results show that hydrogen ion irradiation can cause preferential sputtering of component of SiC, and activated carbon can react chemically with hydrogen to form hydrocarbon species such as methane. The related mechanism is discussed.
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| Keywords:
33.60.Fy
61.80.Jh
68.55.Ln
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Published: 01 January 2004
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| PACS: |
33.60.Fy
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61.80.Jh
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(Ion radiation effects)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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