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Theoretical Analysis of Generalized Oscillator Strengths for Helium by R-Matrix Method |
| HAN Xiao-Ying1;VoKy Lan1;LI Jia-Ming1,2,3 |
| 1Center for Atomic and Molecular Nanosciences, Department of Physics, Tsinghua University, Beijing 100084
2Department of Physics, Shanghai Jiao Tong University, Shanghai 200030
3Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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HAN Xiao-Ying, VoKy Lan, LI Jia-Ming 2004 Chin. Phys. Lett. 21 54-56 |
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Abstract The high-energy electronic-impact excitation cross section is directly proportional to the generalized oscillator strength (GOS) of the target atom. The generalized oscillator strengths of helium atom from the ground state to the excited states (21S, 21P and 31D) are calculated using the updated R-matrix codes within the first Born approximation. Our calculation results are in good agreement with the previous theoretical and experimental results at high incident energies. In order to treat the bound-bound and bound-continuum transitions in a unified manner, the GOS density is defined based on the quantum defect theory. We calculate the GOS densities of 1S, 1P and 1D channels, namely the complete high-energy collision cross sections of electronic-impact excitations into all the n1S, n1P and n1D excited states. In addition to high-energy excitation cross sections, a scheme to calculate the excitation cross sections for entire incident energy range is discussed.
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| Keywords:
31.15.Ar
32.70.Cs
32.80.Cy
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Published: 01 January 2004
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