| Original Articles |
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Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation |
| YU Ke1,5;WANG Wei-Ming1;ZHU Zi-Qiang1;ZHANG Yong-Sheng1;YU Xian-Wen1;CHEN Shao-Qiang1;LI Qiong1;YANG Guang-Da2;ZHU Jian-Zhong1;CHEN Qun3;LU Wei4;ZI Jian6 |
| 1Department of Electric Engineering, East China Normal University, Shanghai 200062
2Department of Chemistry, East China Normal University, Shanghai 200062
3Analytical Center, East China Normal University, Shanghai 200062
4State Key Laboratory for Infrared Physics, Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083
5School of Physics and Microelectronics, Shandong University, Jinan 250061
6National Key Laboratory for Applied Surface Physics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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YU Ke, WANG Wei-Ming, ZHU Zi-Qiang et al 2004 Chin. Phys. Lett. 21 203-206 |
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Abstract Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5 V/μm at current density of 0.1 μA/cm2 was obtained. The emission current density from the SiNC films reached 1 mA/cm2 under a bias field of about 9.1 V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.
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| Keywords:
81.07.Bc
85.45.Db
82.33.Xj
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Published: 01 January 2004
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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85.45.Db
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(Field emitters and arrays, cold electron emitters)
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82.33.Xj
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(Plasma reactions (including flowing afterglow and electric discharges))
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