| Original Articles |
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Effect of Hydrogen Implantation on SIMOX SOI Materials |
| YI Wan-Bing1;CHEN Jing1;CHEN Meng1,2;WANG Xi1,2;ZOU Shi-Chang1 |
| 1Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Shanghai Simgui Technology Co., Ltd., Jiading, Shanghai 201821 |
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| Cite this article: |
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YI Wan-Bing, CHEN Jing, CHEN Meng et al 2004 Chin. Phys. Lett. 21 149-152 |
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Abstract Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.
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| Keywords:
68.37.Lp
61.72.Tt
85.40.Ry
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Published: 01 January 2004
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| PACS: |
68.37.Lp
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(Transmission electron microscopy (TEM))
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61.72.Tt
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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