| Original Articles |
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Dopant Effects on Defects in GaN Films Grown by Metal-Organic
Chemical Vapor Deposition |
| LU Min;YANG Hua;LI Zi-Lan;YANG Zhi-Jian;LI Zhong-Hui;REN Qian;JIN Chun-Lai;LU Shu;ZHANG Bei;ZHANG Guo-Yi |
| School of Physics and Center for Wide Band-Gap Research, Peking
University, Beijing 100871
State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Beijing 100871 |
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| Cite this article: |
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LU Min, YANG Hua, LI Zi-Lan et al 2003 Chin. Phys. Lett. 20 1552-1553 |
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Abstract The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet etching of pits, x-ray diffraction and photoluminescence (PL). Three kinds of the samples were prepared with different dopants, that is, nominally undoped, Si-doped and Mg-doped GaN films. It was found that the lowest density of the etched pit was existed in the nominally undoped GaN, while the highest in the Mg-doped sample. The effects of the dopants on the etching pits were discussed.
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| Keywords:
61.72.-y
78.30.Fs
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Published: 01 September 2003
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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78.30.Fs
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(III-V and II-VI semiconductors)
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